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SSH10N80 10A 800V Power MOSFET
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Opis
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 230 W
Maximum Drain-Source Voltage: 800 V
Maximum Gate-Source Voltage: 30 V
Maximum Gate-Threshold Voltage: 4.5 V
Maximum Drain Current: 10 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 160 nC
Rise Time: 280 nS
Output Capacitance: 290 pF
Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-3P